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411 Datasheet Equivalent Cross Reference Search
411 Datasheet Equivalent Cross Reference Search Type Designator 411 5A 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On Resistance SO 8 Internal Schematic Diagram Top View P Channel MOSFET Maximum Ratings and Thermal Characteristics TA 1 5 Low Vcesat PNP Epitaxial Planar Transistor

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N CHANNEL MOS FET FOR HIGH SPEED SWITCHING The 2SK2109 is a N channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 4 5 0 1 an IC operating at 5 V 1 5 0 1 1 6 0 2 This product has a low ON resistance and

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STK4833 datasheet applicatoin notes Datasheet Archive
Abstract Sanyo STK5325 STK4853 STK4893 STK4843 stk4833 stk5322 STK470 STK4793 STK5326 Text SANYO SEMICONDUCTOR CORP 7b D 7997076 SANYO SEMICONDUCTOR CORP f 1 71170713 D0Q1171 t 76C 01979 D STK4703 SERIES thick film hybrid IC CIRCUIT DRAWING No f OSB 2 CHANNEL 1 O TO 5GW MIN AF ROWER AMP CDUAL SUPPLY 4029 Featu res AF

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Sanyo STK datasheet applicatoin notes Datasheet Archive
Sanyo IMST Hybrid 2SA1943 2SC5200 parts is 55 at 1A Sanyo Audio Bipolar Power Transistors Sanyo s adoption of the TO 220 TO 3P TO 3P TO 3P TO 3P Sanyo Sanyo Sanyo Sanyo Sanyo For more information 220F TO 220 TO 220F Manufacturer Sanken Sanken Sanken Sanken Sanken Sanyo Magnatec 5 pin TO Original PDF

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2SD1929 Datasheet Equivalent Cross Reference Search
SMD Type Transistors NPN Transistors 2SD1974 SOT 89 Unit mm 1 70 0 1 Features Collector Current Capability IC 0 8A C Collector Emitter Voltage VCEO 25V 0 42 0 1 0 46 0 1 B ID 1 Base 2 Collector 3 Emitter E Absolute Maximum Ratings Ta 25 f Parameter Symbol Rating Unit Collector Base Voltage VCBO 25 Collector Emitter Voltage VCEO 25 V

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413 Datasheet Equivalent Cross Reference Search
SMD Type Transistors NPN Transistors 2SD2413 SOT 89 Unit mm 1 70 0 1 Features Collector Current Capability IC 100mA Collector Emitter Voltage VCEO 400V 0 42 0 1 0 46 0 1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta 25 f Parameter Symbol Rating Unit Collector Base Voltage VCBO 400 Collector Emitter Voltage VCEO 400 V

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Ic A Tj C Ft MHz Cc pF Hfe Caps R1 kOhm How to choose a replacement for a bipolar transistor Cross Reference Search Result Equivalent Transistors Type 100DA025D 100T2 101NU70 102NU70 103NU70 104NU70 104T2 105NU70 106NU70 1074GE 107NU70 108T2 109T2 10AM20 111T2 111T2 18 1129NTV1 1165905 121 1003

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Internal Transistor an overview ScienceDirect Topics
For this example we use the transistor parameters for the International Rectifier IRF540N silicon MOSFET and quality factors of 150 for inductors and 1000 for capacitors We assume that the transistor internal temperature is 95 C obtained as a 60 C rise above an ambient air temperature of 35 C